Defect Modulation Doping
نویسندگان
چکیده
منابع مشابه
Defect Doping of InN
InN films grown by molecular beam epitaxy have been subjected to 2 MeV He + irradiation followed by thermal annealing. Theoretical analysis of the electron mobilities shows that thermal annealing removes triply charged donor defects, creating films with electron mobilities approaching those predicted for uncompensated, singly charged donors. Optimum thermal annealing of irradiated InN can be us...
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making them promising building blocks for preparing macroscopic structural composites. [ 2 ] However, attempts to form highly stiff nanocomposites [ 2c , 2d , 3 ] from them thus far have only yielded materials that behave mechanically similarly to brittle ceramics and fracture at far lower strengths than the component nanostructures. This can be explained using the classical Weibull analysis, [...
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ژورنال
عنوان ژورنال: Advanced Functional Materials
سال: 2019
ISSN: 1616-301X,1616-3028
DOI: 10.1002/adfm.201807906